Method for photo annealing non-single crystalline semiconductor

Details Method for photo annealing non-single crystalline semiconductor Method for photo annealing non-single crystalline semiconductor

1989-03-09

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG4, 148DIG24, 148DIG1, 427 39, 427 531, 427 82, 427 85, 427174, 427247, 427942, H01L 2120, H01L 21324

Patent

active

048883050

ABSTRACT:
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

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patent: 4567061 (1986-01-01), Hayashi et al.
patent: 4590091 (1986-05-01), Rogers, Jr. et al.
patent: 4595601 (1986-06-01), Horioka et al.

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