Method of manufacturing an soi-type semiconductor device

Details Method of manufacturing an soi-type semiconductor device Method of manufacturing an soi-type semiconductor device

1986-12-22

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG12, 148DIG135, 357 15, 437946, 437974, 437925, 437 84, H01L 2120

Patent

active

048883042

ABSTRACT:
The present semiconductor device comprises a first semiconductor substrate, an oxide film formed on the substrate and a second semiconductor substrate bonded to the oxide film. In particular, the semiconductor substrate further has a monocrystalline silicon layer which is formed by an epitaxial growth method on the second semiconductor substrate. Circuit elements are formed within the monocrystalline silicon layer.

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