Fishing – trapping – and vermin destroying
Patent
1988-11-09
1989-12-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
427253, 156614, 437110, 437949, H01L 2120
Patent
active
048883034
ABSTRACT:
A continouous process of forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique having a pressure controlled source of hydrogen chloride gas to maintain a partial pressure of the gas as a function of time as the amount of gallium is depleted from the alloy source melt of Ga/In during the growth of the epitaxial layer.
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Tu et al., "Effects of Varying The Input and Downstream HCl . . . Hydride Growth of Int.," J. Crys. Growth, 70 (1984), pp. 117-122.
Quinlan et al., "Formation . . . of Ga.sub.x In.sub.l-x As In the VPE-Hydride . . . Hydrogen Chloride Etc.", J. Crys. Growth, 71 (1985), pp. 246-248.
Jones et al., ". . . Lattice Matching of InGaAs to InP," J. Crys. Growth, 70 (1984), pp. 127-132.
Pogge et al. "Doping Behavior of Silicon in Vapor-Growth III-V Epitaxial Film," J. Crys. Growth, 31 (1975), pp. 183-189.
Bunch William
Collier Stanton E.
Hearn Brian E.
Singer Donald J.
The United States of America as represented by the Secretary of
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