Method for generating a sunken oxide

Details Method for generating a sunken oxide Method for generating a sunken oxide

1988-09-16

1989-12-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 49, H01L 2176

Patent

active

048883018

ABSTRACT:
A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.

REFERENCES:
patent: Re31506 (1984-01-01), Ogive et al.
patent: 4044454 (1977-08-01), Magdo

Affiliated with

Also associated with

Rating

Method for generating a sunken oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for generating a sunken oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for generating a sunken oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1902676