Polysilicon-to-substrate contact processing

Metal treatment – Compositions – Heat treating

Patent

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Details

29571, 29576B, 29580, 148187, 156626, 156657, 156662, 427 95, 427399, H01L 2122, H01L 2126, H01L 21308, H01L 21316

Patent

active

043057608

ABSTRACT:
A process for forming polysilicon-to-substrate contacts. The process permits the use of a polysilicon-to-substrate contact mask and eliminates the exposure of the substrate in the contact regions to the polysilicon etch. The polysilicon contact-forming conductors are formed from a layer of polysilicon by etching partially through the layer to leave a residual layer surrounding and defining the conductors; converting the residual polysilicon to oxide; and selectively etching the oxide. The result is a damage-free substrate contact region exhibiting reduced junction leakage current.

REFERENCES:
patent: 3523842 (1970-08-01), Glendinning
patent: 3677848 (1972-07-01), Stoller et al.
patent: 3936331 (1976-02-01), Luce et al.
patent: 3950188 (1976-04-01), Bower
patent: 3967981 (1976-07-01), Yamazaki
patent: 4031608 (1977-06-01), Togei et al.
patent: 4039370 (1977-08-01), Kleinknecht
patent: 4080718 (1978-03-01), Richman
patent: 4123300 (1978-10-01), Joshi et al.
patent: 4127931 (1978-12-01), Shiba
patent: 4139402 (1979-02-01), Steinmaier
patent: 4148931 (1979-04-01), Reuschel et al.
patent: 4151631 (1979-05-01), Klein
patent: 4239559 (1980-12-01), Ito
patent: 4263709 (1981-04-01), Weitzel et al.

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