Plasma processing apparatus

Coating apparatus – Gas or vapor deposition – Multizone chamber

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Details

156345, 414217, 414222, 4147446, 414739, B25J 2100, H01L 2100

Patent

active

060248009

ABSTRACT:
According to the present invention, a plasma processing apparatus for performing surface processing of a substrate by means of plasma discharge is provided comprising: a processing chambers 10R and 10L for performing surface processing of a substrate W; a load-lock chamber 11 which is arranged in between these processing chambers 10R and 10L; and transporting mechanisms which are capable of performing substrate transport between load-lock chamber 11 and processing chamber 10R, and between load-lock chamber 11 and processing chamber 10L; these transporting mechanisms are freely movable in a reciprocating manner in the direction in which processing chamber 10R, load-lock chamber 11, and processing chamber 10L are contiguously arranged; wherein, upper wing 20U and lower wing 20L, which are spaced apart in a vertical manner with respect to each other, are provided as the aforementioned transporting mechanisms.

REFERENCES:
patent: 4592306 (1986-06-01), Gallego
patent: 4816638 (1989-03-01), Ukai et al.
patent: 5021138 (1991-06-01), Babu et al.
patent: 5183547 (1993-02-01), Ikeda
patent: 5397432 (1995-03-01), Konno et al.
patent: 5584647 (1996-12-01), Uehara et al.
patent: 5713717 (1998-02-01), Cho
patent: 5759334 (1998-06-01), Kojima et al.

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