Memory cell of nonvolatile semiconductor memory device

Details Memory cell of nonvolatile semiconductor memory device Memory cell of nonvolatile semiconductor memory device

1995-05-03

1996-05-14

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular connection

36518528, G11C 1134

Patent

active

055174493

ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuit. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4233526 (1980-11-01), Kurogi et al.
patent: 4425632 (1984-01-01), Iwahashi et al.
patent: 4467453 (1984-08-01), Chiu et al.
patent: 4500975 (1985-02-01), Shirato
patent: 4580247 (1986-04-01), Adam
patent: 4648074 (1987-03-01), Pollachek
patent: 4901281 (1990-02-01), Yoshida et al.
patent: 5008856 (1991-04-01), Iwahashi
patent: 5148394 (1992-09-01), Iwahashi
patent: 5270969 (1993-12-01), Iwahashi
H. N. Kotecha, "Electrically Alterable Non-Volatile Lobic Circuits." IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec. 1981.
R. Stewart et al., "A High Density EPROM Cell and Array," Symposium on VLSI Technology--Digest of Technical Papers, May 1986, pp. 89-90.
E. Adler, "Densely Arrayed EEPROM Having Low-Voltage Tunnel Write," IBM Tech. Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, pp. 3302-3307.
Prince and Due-Gundersen, "Semiconductor Memories," 1983, pp. 136-139.

Affiliated with

Also associated with

Rating

Memory cell of nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell of nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell of nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1901747