Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1994-11-14
1996-05-14
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 95, 257 96, 257 97, 257 98, 257631, 372 45, 372 46, 372 49, H01L 3300
Patent
active
055170390
ABSTRACT:
LEDs and other semiconductor devices fabricated with III-V materials and having exposed Al-bearing surfaces passivated with native oxides are disclosed. A known high temperature water vapor oxidation process is used to passivate the exposed layers of Al-bearing III-V semiconductor materials in confined-emission spot LEDs and other light emitting devices. These devices exhibit greatly improved wet, high temperature operating life, with little to no degradation in light output when exposed to such conditions.
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Holonyak, Jr. Nick
Keever Mark R.
Kish Fred A.
Lei Chun
Richard Tim A.
Hewlett--Packard Company
Mintel William
Penn Jonathan B.
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