Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-05-18

1990-07-03

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 48, 372 45, H01S 319

Patent

active

049397435

ABSTRACT:
A semiconductor laser device comprising an active layer sandwiched between a first semiconductor layer and a second semiconductor layer, the forbidden bandgap of each of said first and second layers being larger than that of said active layer, wherein at least one of said first and second layers has a striped projection provided with two inclined surfaces; said layer is sandwiched between said active layer and a light absorption layer; and the thickness of said layer that corresponds to the inside of the center area of each of the two inclined surfaces is thick enough so that laser light cannot permeate into said absorption layer and the thickness of said layer that corresponds to the outside of the center area of each of the two inclined surfaces is sufficiently thin so that laser light can permeate into said absorption layer, whereby the thickness of a semiconductor layer that constitutes a double-heterostructure is not required to be precisely regulated so that the laser device is not restricted by production conditions and mass-production.

REFERENCES:
patent: 4326176 (1982-04-01), Aiki et al.
patent: 4592060 (1986-05-01), Hayakawa et al.

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