Semiconductor accelerometer

Measuring and testing – Speed – velocity – or acceleration – Acceleration determination utilizing inertial element

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338 2, G01P 1512

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052514854

ABSTRACT:
A semiconductor accelerometer comprising a semiconductor base member and an acceleration response member having a semiconductor beam integrally extending from the base member and a semiconductor weight integrally formed at a tip end of the beam so as to deflect the semiconductor beam when the weight is subjected to acceleration. At least one gauge diffusion resistor is formed in the semiconductor beam. The at least one gauge diffusion resistor includes a contact diffusion region which is formed at each end of the at least one gauge diffusion resistor and which has a diffusion concentration higher than that of the at least one gauge diffusion resistor. The contact diffusion region formed at each end of the at least one gauge diffusion resistor is connected to a wiring conductor.

REFERENCES:
patent: 3815222 (1974-06-01), Mitarai et al.
patent: 4869107 (1989-09-01), Murakami
Roylance et al, "A Batch-Fabricated Silicon Accelerometer", IEEE Transactions on Electron Devices, vol. ED-26, No. 12 pp. 1911-1917, Dec. 1979.
Davidson et al., "Silicon Accelerometer Technology", Proceedings IECON '86, CH2334-1, Milwaukee, Wis., vol. 1, pp. 218-222, Sep. 29-Oct. 3, 1986.

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