Semiconductor device having an arrangement of IGFETs and capacit

Details Semiconductor device having an arrangement of IGFETs and capacit Semiconductor device having an arrangement of IGFETs and capacit

1989-07-25

1992-02-25

Hille, Rolf

357 41, 357 51, 357 45, H01L 2968, H01L 2702, H01L 2710

Patent

active

050917617

ABSTRACT:
Disclosed is a semiconductor device including a charge storage capacitor having a storage electrode which is electrically connected to a switching transistor through a contact hole provided in an insulator and which has a greater film thickness than the radius of the contact hole, at least a part of the storage electrode being disposed above a data line. It is possible to reduce the memory cell area while preventing lowering in the capacitance, and thus realize high density and high integration of semiconductor devices.

REFERENCES:
patent: 4910566 (1990-03-01), Ema
patent: 4953126 (1990-08-01), Ema
patent: 4958318 (1990-09-01), Harari
patent: 4970564 (1990-11-01), Kimura et al.

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