Method for the fabrication of a capacitor in a semiconductor dev

Details Method for the fabrication of a capacitor in a semiconductor dev Method for the fabrication of a capacitor in a semiconductor dev

Filed on

1994-05-23

Date issued

1996-05-14

Examiner

Nguyen, Tuan H.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 47, 437 49, 437 52, 437919, 148DIG14, H01L 2170, H01L 2700

Type

Patent

Status

active

Patent number

055167195

Description

ABSTRACT:
There is disclosed a method for the fabrication of capacitor, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film, to form a contact hole exposing an active region of the transistor therethrough and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and a plurality of second spacer oxide films on the polysilicon film, in due order; carrying out etch, so as to attenuate the conductive polysilicon films; etching the conductive polysilicon film by use of the plurality of spacer oxide films as an etch mask, to form a charge storage electrode, the charge storage electrode being determined by the attenuation of the conductive polysilicon in size; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film. There can be realized an increase in the effective area of the charge storage electrode compared to the area of the mask for the charge storage electrode. In addition, the increase in capacitance of the charge storage electrode, in turn, results in an improvement in device reliability.

REFERENCES:
patent: 5023203 (1991-06-01), Choi
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5192702 (1993-03-01), Tseng
patent: 5227322 (1993-07-01), Ko et al.
patent: 5231044 (1993-07-01), Jun
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5296410 (1994-03-01), Yang
patent: 5330614 (1994-07-01), Ahn

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