Deep finger diodes

Patent

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Details

357 65, 357 88, 357 89, 357 90, H01L 2904, H01L 2348

Patent

active

039887707

ABSTRACT:
Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The migration of the liquid wire or droplet is reversed to remove the wire or droplet from the body leaving a recrystallized material of the body having solid solubility of a material therein.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3171068 (1965-02-01), Denkewalter et al.
patent: 3544397 (1970-12-01), Weinerth

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