Semiconductor switch with parallel DMOS and IGT

Details Semiconductor switch with parallel DMOS and IGT Semiconductor switch with parallel DMOS and IGT

1987-10-30

1990-07-03

Mintel, William

357 234, 357 238, 357 86, 357 38, H01L 2702

Patent

active

049395661

ABSTRACT:
A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.

REFERENCES:
patent: 4199774 (1980-04-01), Plummer
patent: 4300150 (1981-11-01), Colak
patent: 4618872 (1986-10-01), Baliga
patent: 4694313 (1987-09-01), Beasom
patent: 4712124 (1987-12-01), Stupp
IEEE Transactions, vol. Ed. 33, No. 12, Dec. 1986, pp. 1956-1963, Pahanayak et al.

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