Transistor having improved turn-off time and second breakdown ch

Details Transistor having improved turn-off time and second breakdown ch Transistor having improved turn-off time and second breakdown ch

1981-02-19

1982-08-17

Clawson, Jr., Joseph E.

357 20, 357 36, 357 38, H01L 2972

Patent

active

043452663

ABSTRACT:
A power transistor having improved turn-off characteristics and enhanced reversed second breakdown capabilities is described wherein the emitter of the transistor includes first and second regions, the first region being disposed within the second region and having lower gain than the second region. Turn off is enhanced as essentially no current flows under the lower gain first region during turn off thereby facilitating the removal of excess charge carriers when the device is in the turn-off stage.

REFERENCES:
patent: 3300694 (1967-01-01), Stehney et al.
J. Gillett, "Power Transistor Having Increased Reverse Bias Safe Operating Area," IBM Tech. Discl. Bull., vol. 16 #11, Apr. 1974, p. 3642.

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