Semiconductor laser and method of fabricating same

Details Semiconductor laser and method of fabricating same Semiconductor laser and method of fabricating same

1991-07-24

1992-12-29

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 50, 437 51, 437129, H01S 319, H01L 2120

Patent

active

051757400

ABSTRACT:
A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser whereby the etch stop layer prevents further etching into said heterostructure.

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M. Okayasu et al., "Stable Operation (Over 5000 h) . . . Amplifiers," IEEE Photonics Technology Letters, Oct. 1990, vol. 2, No. 10, pp. 689-691.
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M. Shimizu et al., "Erbium-Doped Fibre Amplifiers . . . 11.0 dB/mW," Electronics Letters, Sep. 27, 1990, vol. 26, No. 20, pp. 1641-1643.
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