Method of making a high breakdown active device structure with l

Details Method of making a high breakdown active device structure with l Method of making a high breakdown active device structure with l

1990-10-03

1992-02-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437156, 437917, 148DIG85, 148DIG126, 148DIG167, H01L 2122

Patent

active

050913360

ABSTRACT:
Series resistance in the low impurity portion of a high breakdown PN junction of a three or four layer device is reduced by providing an increased inpurity region at the junction of the same conductivity type as the low impurity portion and having an impurity profile such that the increased impurity region is depleted under reverse biasing before critical field is reached therein. The three layer devices include insulated gate field effect transistors and bipolar devices and the four layer device is a semiconductor controlled rectifier (SCR).

REFERENCES:
patent: 3183128 (1965-05-01), Leistiko, Jr. et al.
patent: 3252062 (1966-05-01), Kooi
patent: 3450961 (1969-06-01), Tsai
patent: 3488527 (1970-01-01), Ruegg
patent: 3772079 (1973-03-01), Beasom
patent: 3821657 (1974-06-01), Yo et al.
patent: 3865649 (1975-02-01), Beasom
patent: 3883372 (1975-05-01), Lin
patent: 3909320 (1975-09-01), Gauge et al.
patent: 3911461 (1975-10-01), Clark
patent: 4144098 (1979-03-01), Roesner
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4258379 (1981-03-01), Watanabe et al.
patent: 4290831 (1981-09-01), Ports et al.
patent: 4366495 (1982-12-01), Goodman et al.
"Introduction to Electronic Systems, Circuits, and Devices" by D. O. Peterson, J. T. Studer & J. R. Whinnery; McGraw-Hill Book Company, 1966.
"Solid State Electronic Devices" by Ben G. Streetman; Prentice-Hall, Inc., 1972.

Affiliated with

Also associated with

Rating

Method of making a high breakdown active device structure with l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a high breakdown active device structure with l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a high breakdown active device structure with l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1892717