Method of late programming MOS devices

Details Method of late programming MOS devices Method of late programming MOS devices

1989-11-21

1992-02-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 45, 437 48, 437 51, 437145, 437150, 437162, 357 2312, H01L 2170, H01L 2100

Patent

active

050913280

ABSTRACT:
Method for late programming of MOS integrated circuit devices. A second or third level conductive layer is used as a device selection mask for transporting dopant from a doped gate (formed from a first level conductive layer) into the channel region of selected field effect transistors.

REFERENCES:
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4467520 (1984-08-01), Shiotari
patent: 4513494 (1985-04-01), Batra
patent: 4818716 (1989-04-01), Okuyama et al.
patent: 4837181 (1989-06-01), Galbiati et al.

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