Semiconductor memory device having a driving circuit provided in

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

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Details

36518909, 365205, 365233, 36518907, G11C 700

Patent

active

051757079

ABSTRACT:
A semiconductor memory device comprises memory cell array, bit line pairs respectively coupled to the columns of the memory cells, sense amplifier circuits operative to increase small differences in voltage level on the bit line pairs, first and second voltage lines supplying a high voltage level and the ground voltage level through the sense amplifier circuits to the bit line pairs for increasing the small difference, and a driving circuit operative to activate the sense amplifier circuits, wherein the driving circuit comprises an equalizing circuit for equalizing the first and second voltage lines to an intermediate voltage level, a first transistor coupled between the first voltage line and a source of an external voltage level higher than the high voltage level, a second transistor providing a conduction path between a source of the second voltage level and the second voltage line in the presence of a control signal and isolating the second voltage line from the source of the second voltage level in the absence of the control signal, and a control circuit causing the first transistor to produce the high voltage level in the presence of another control signal and to isolate the first voltage line from the source of the external voltage level in the absence of the control signal.

REFERENCES:
patent: 4951256 (1990-08-01), Tobita

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