Method for forming contacts with anomalously low resistance

Details Method for forming contacts with anomalously low resistance Method for forming contacts with anomalously low resistance

1995-01-10

1995-10-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437194, H01L 2144

Patent

active

054610060

ABSTRACT:
A method where WSi.sub.x films are used to contact heavily doped, n.sup.+ regions in a silicon substrate. The doped regions are formed by ion implantation of an impurity such as arsenic (As). The deposited WSi.sub.x film is annealed prior to the deposition of the aluminum interconnect. This anneal is carried out at typical dopant activation conditions. The procedure results in unexpectedly low resistance for small contact areas of less than 1.7 .mu.m.sup.2 when the WSi.sub.x film has a thickness of between 1000 .ANG. and 2500 .ANG..

REFERENCES:
patent: 5302549 (1994-04-01), Santangelo et al.
H. L. Balbar et al. "Al/SiO.sub.2 /WSi.sub.2 /Si double-level metallization for charge--coupled device imagers" J. Vac. Sci. Technol. Nov./Dec. 1985 pp. 1645-1649.
Shinichi Inoue et al. "Tungsten Silcicide/silicon contact layer analysis" Appl. Ion Beams Mater. Sci. Proc. Int. Symp. Hosei Univ 12th Meeting (1987) pp. 227-232 (Abstract).
Probst et al. "WSi.sub.2 and CoSi.sub.2 as Diffusion Sources in Shallow Junction Formation in Si" J Appl. Phys Jul. 1991 vol. 70 No. 2 pp. 708-719 (abstract).

Affiliated with

Also associated with

Rating

Method for forming contacts with anomalously low resistance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming contacts with anomalously low resistance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming contacts with anomalously low resistance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1886424