Method for fabricating a segmented AMG EPROM where only every fo

Fishing – trapping – and vermin destroying

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437 48, 437 50, H01L 218247

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054609909

ABSTRACT:
The current driven by the segment select transistors of an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), is increased by eliminating the even numbered segment select transistors in every other row of segment select transistors, and the odd numbered segment select transistors in the remaining rows, and by changing the current path through the segment so that the current flows from a segment select transistor in one row of segment select transistors to a segment select transistor in an adjacent row of transistors. By eliminating every other segment select transistor in each row of transistors, the maximum pitch of the segment select transistors can be substantially increased, thereby providing the required programming current, while at the same time maintaining the required isolation between adjacent segment select transistors.

REFERENCES:
patent: 5246874 (1993-09-01), Bergemont
patent: 5306658 (1994-04-01), Gill
patent: 5354703 (1994-10-01), Gill
Bergemont, U.S. Ser. No. 08/217,076 filed on Mar. 35, 1994.
Bergemont, U.S. Ser. No. 07/988,293 filed on Dec. 8, 1992.

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