Semiconductor device having increased current capacity

Details Semiconductor device having increased current capacity Semiconductor device having increased current capacity

1994-10-07

1995-10-24

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 63, 437149, H01L 21332

Patent

active

054609810

ABSTRACT:
A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3a and 3b, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al--Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a , p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.

REFERENCES:
patent: 5169793 (1992-12-01), Okabe et al.
patent: 5254864 (1993-10-01), Ogawa
patent: 5346838 (1994-09-01), Ueno

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