Monolithic infrared ray charge transfer element

Details Monolithic infrared ray charge transfer element Monolithic infrared ray charge transfer element

1983-11-04

1985-11-12

James, Andrew J.

357 30, 357 31, 357 16, 357 15, H01L 2978

Patent

active

045531528

ABSTRACT:
A monolithic infrared ray charge transfer element suitable for use in the 8 to 14 .mu.m wavelength range, having improved response characteristics, and which is easily fabricated. A charge transfer element is formed on a semiconductor substrate and a semiconductor layer formed on the substrate. An infrared ray detecting element is formed upon the semiconductor layer using a different semiconductor material from that of the semiconductor layer. Preferably, the substrate and semiconductor layer are formed of gallium arsenide and the infrared ray detecting element of mercury cadmium telluride or lead tin telluride.

REFERENCES:
patent: 3873836 (1975-03-01), Greene
patent: 3883437 (1975-05-01), Nummedal et al.
patent: 4079507 (1978-03-01), King
patent: 4273596 (1981-06-01), Gutierrez et al.
patent: 4275407 (1981-06-01), Lorenze, Jr.
patent: 4422091 (1983-12-01), Liu
patent: 4488165 (1984-12-01), Levine
Deyhimy, "GaAs CCD," IEEE Electronics and Aerospace Systems Conventions, Arlington, VA (Sep. 29-Oct. 10, 80) pp. 151-154.
Pawlikowski, "Some Properties of Photovoltaic Cd.sub.x Hg.sub.1- Te Detectors for Infrared Radiation," Infrared Physics, vol. 15, No. 4, pp. 331-337.

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