Patent
1981-11-20
1984-07-31
James, Andrew J.
357 13, 357 17, H01L 2714
Patent
active
044633688
ABSTRACT:
An n-p-.pi.-p.sup.+ Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater than about 35 micrometers into the body from the surface and wherein the n-type conductivity region extends a distance into the body such that the p-n junction is less than about 10 micrometers from the surface of the body. The method of the invention comprises introducing a reduced number of acceptors into the surface of the body, diffusing the acceptors into the body a distance greater than about 35 micrometers and forming an n-type conductivity region such that the p-n junction is less than 10 micrometers from the surface of the device. APDs of the invention exhibit a k.sub.eff of about 0.006 which is a factor of greater than 2.5 less than that of typical prior art devices.
REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4127932 (1978-12-01), Hartman et al.
patent: 4129878 (1978-12-01), Webb
patent: 4383267 (1983-05-01), Webb
Properties of Avalanche Photodiodes by P. P. Webb et al., RCA Review, vol. 35, Jun. 1974, pp. 234-278.
An Optimized Avalanche Photodiode by H. W. Ruegg, IEE Transactions on Electron Devices, vol. ED-14, No. 5, May 1967, pp. 239-251.
McIntyre Robert J.
Webb Paul P.
Burke William J.
Cohen Donald S.
James Andrew J.
Mintel W.
Morris Birgit E.
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