JFET Reflection oscillator

Details JFET Reflection oscillator JFET Reflection oscillator

1980-05-27

1985-11-12

Westin, Edward P.

Oscillators

Solid state active element oscillator

Transistors

331117FE, H03B 512, H03B 536

Patent

active

045531102

ABSTRACT:
A high frequency oscillator circuit is provided using a low cost junction type field effect transistor (T.sub.1) with a tuned circuit connected to its gate. The frequency of operation is determined by the tuned circuit and the capacitance reflected from the source to the gate. The transistor is matched to the frequency of operation so that this frequency falls within the roll-off portion of the transistor's transconductance verses frequency curve, preferably somewhat above the 3 db point in frequency. Phase shifting necessary to sustain oscillation occurs due to the operation of the transistor in the roll-off portion of the curve and the addition of a phase shifting network (R.sub.1, C.sub.1) at the source. The resulting oscillator is small, stable, linear and inexpensive.

REFERENCES:
patent: 3477039 (1969-11-01), Chan
Garner, Jr., "Meet Mr. FET", Popular Electronics, Feb. 1967, pp. 47-53, 94.

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