Semiconductor device having capacitor and manufacturing method t

Details Semiconductor device having capacitor and manufacturing method t Semiconductor device having capacitor and manufacturing method t

1997-04-28

1998-07-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438 3, 438240, 438253, H01L 2120, H01L 218242, H01L 2100

Patent

active

057803510

ABSTRACT:
A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

REFERENCES:
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5374578 (1994-12-01), Patel et al.
patent: 5571746 (1996-11-01), Pan
patent: 5576240 (1996-11-01), Radosevich et al.
patent: 5583068 (1996-12-01), Jones, Jr. et al.
patent: 5593914 (1997-01-01), Evans, Jr. et al.
patent: 5622893 (1997-04-01), Summerfelt et al.

Affiliated with

Also associated with

Rating

Semiconductor device having capacitor and manufacturing method t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having capacitor and manufacturing method t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having capacitor and manufacturing method t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1881262