Method of making high-speed, low-noise millimeterwave HEMT and p

Details Method of making high-speed, low-noise millimeterwave HEMT and p Method of making high-speed, low-noise millimeterwave HEMT and p

1995-11-09

1998-02-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438172, H01L 2100

Patent

active

057211612

ABSTRACT:
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

REFERENCES:
patent: 4944811 (1990-07-01), Sukegawa et al.
patent: 5037776 (1991-08-01), Galeuchet et al.
patent: 5358897 (1994-10-01), Valster et al.
C.G. Van de Walle, "Band Lineups and Deformation Potentials In the Model-Solid Theory", Phys. Rev. B., vol. 39, pp. 1871-1881, Jan. 1989.

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