Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-07-02

1999-05-04

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 13, 257 96, 257103, 257507, 438465, H01L 3300

Patent

active

059006501

ABSTRACT:
There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer made of a first conductivity type gallium nitride based semiconductor, an active layer made of a gallium nitride based semiconductor into which impurity is not doped intentionally, and a second cladding layer made of a second conductivity type gallium nitride based semiconductor which being opposite to the first conductivity type on a sapphire substrate. A surface of the sapphire substrate is polished to have optical transmissivity of more than 60%.

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patent: 4791465 (1988-12-01), Sakai et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5479827 (1996-01-01), Kimura et al.
patent: 5549978 (1996-08-01), Iwasaki et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5602418 (1997-02-01), Imai et al.

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