Performing optical proximity correction with the aid of design r

Details Performing optical proximity correction with the aid of design r Performing optical proximity correction with the aid of design r

1997-08-15

1999-05-04

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059003383

ABSTRACT:
A method is disclosed for identifying regions of an integrated circuit layout design where optical proximity correction will be most useful and then performing optical proximity correction on those regions only. More specifically, the method includes the following steps: (a) analyzing an integrated circuit layout design with a design rule checker to locate features of the integrated circuit layout design meeting predefined criteria; and (b) performing optical proximity correction on the features meeting the criteria in order to generate a reticle design. The criteria employed by the design rule checker to select features include outside corners on patterns, inside corners on features, feature size, feature shape, and feature angles.

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R. Socha, A. Wong, M. Cagan, Z. Krivokapic and A. Neureuther, "Effects of Wafer Topography on the Formation of Polysilicon Gates", Dept. of Elec. Eng. and Computer Science, University of Berkeley, SPIE vol. 2440/361. Mar. 1995.

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