Wiring structure of a semiconductor device with beta tungsten

Details Wiring structure of a semiconductor device with beta tungsten Wiring structure of a semiconductor device with beta tungsten

1990-07-23

1992-06-30

Larkins, William D.

357 65, 357 67, H01L 23532

Patent

active

051268256

ABSTRACT:
A wiring structure of a semiconductor device comprises a silicon substrate, a diffusion layer formed in the silicon substrate, an insulating layer formed on the silicon substrate, the insulating layer having a contact hole which exposes the diffusion layer, a beta tungsten layer selectively formed in the contact hole so that the contact hole is filled with beta tungsten, and a wiring layer formed on the insulating layer and the beta tungsten layer, the beta tungsten extending through the contact hole so as to electrically connect the wiring layer and the diffusion layer.

REFERENCES:
patent: 4902645 (1990-02-01), Ohba
Takayuki Ohba, et al., "Selective CVD Tungsten Silicide For VLSI Applications", Int'l Electron Devices Meeting, Dec. 6-9, 1987, pp. 213-216.

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