Metal treatment – Compositions – Heat treating
Patent
1980-09-12
1983-03-22
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 148187, 219121LF, 357 91, 427 531, H01L 21263
Patent
active
043774210
ABSTRACT:
An insulating film is formed on a semiconductor substrate, and the insulating film on that part of the semiconductor substrate where an emitter is to be formed, is removed to expose the surface of the above part. A polycrystalline or amorphous silicon film is deposited on the entire surface, and then irradiated with a laser beam to convert that portion of the polycrystalline or amorphous silicon film which is deposited on the surface of the semiconductor substrate without interposing the insulating film therebetween, into a single crystal of silicon, thereby forming a stacked emitter.
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Anantha et al., IBM-TDB, vol. 22(2), (Jul. 1979), 575-576.
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Shah et al., in Int..sup.n. Electron Device Meeting, Washington, D.C., Dec. 1979, pp. 216-219.
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Tsuchimoto et al., Solid State Electronics, 19, (1976), 1042-1043.
Ikeda Takahide
Tamura Masao
Wada Yasuo
Hitachi , Ltd.
Roy Upendra
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