Solid-state image sensor device with pixel array structure of in

Details Solid-state image sensor device with pixel array structure of in Solid-state image sensor device with pixel array structure of in

1995-07-11

1998-06-30

Garber, Wendy

Television

Camera, system and detail

Solid-state image sensor

348315, 257231, H04N 314

Patent

active

057741824

ABSTRACT:
The solid-state image sensor device includes a photodiode section having a storage region of a second conductivity type and a surface layer of a first conductivity type, a vertical CCD register having a buried layer of the second conductivity type and a plurality of transfer electrodes, and a transfer gate having a transfer gate electrode. A channel control region of the second conductivity type is provided on a surface of the semiconductor substrate region covered by the transfer gate. With the channel control region of the second conductivity type provided at a surface portion of the semiconductor substrate region of the transfer gate, the charge read-out channel for reading out charge from the storage region into the buried layer may be readily formed. Thus, it is possible to reduce the read-out voltage or reduce the gate length of the transfer gate.

REFERENCES:
patent: 5014132 (1991-05-01), Kumesawa et al.
patent: 5471246 (1995-11-01), Nishima et al.
"A High-Packing Density Pixel with Punchthrough Read-Out Method for an HDTV Interline CCD" Oxaki et al; IEEE Transaction on Electron Devices, vol. 41, No. 7; Jul. 1994.
"A 1/4 inch 380k Pixel IT-CCD Image Sensor Employing Gate-Assisted Punchthrough Read-Out Mode" Mutoh et al;International Electron Devices meeting, Dec. 5-8, 1993 pp. 563-566.
"A High Packing Density Pixel With Punchthrough Read-Out Method For An HDTV Interline-CCD" Ozaki et al; Central Research Laboratory, Jul. 1994.

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