Method of making Schottky barrier diode by selective beam-crysta

Details Method of making Schottky barrier diode by selective beam-crysta Method of making Schottky barrier diode by selective beam-crysta

1981-04-01

1983-03-22

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 427 531, 357 91, 357 15, H01L 2126, H01L 21263

Patent

active

043770312

ABSTRACT:
Generally, a complicated process is required in manufacturing a semiconductor device containing a Schottky barrier diode and a polycrystalline silicon layer which prevents excessive reaction of the aluminum electrode and silicon material involved. Because of the inability of the aluminum electrode to provide a good Schottky barrier by its contact with the polycrystalline silicon layer, it is required to directly contact the electrode with a monocrystalline silicon semiconductor layer or substrate. According to the present invention, this process is simplified by monocrystallizing the polycrystalline silicon layer at least in the region in which a Schottky barrier diode is to be formed by annealing the silicon layer in said region by laser beam irradiation and applying an aluminum electrode thereto.

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patent: 4292091 (1981-09-01), Togei
Anantha et al., IBM-TDB, 22, (1979), 575.
Celler et al., Appl. Phys. Letts., 32, (1978), 464.
Chu et al., IBM-TDB, 22 (1980), May.
Poate et al., Appl. Phys. Letts., 33 (1978), 918.
Petersen, IBM-TDB, 22 (Apr. 1980), 5054.

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