Compact semiconductor integrated circuit capable of reducing ele

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure

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327565, H01L 2704

Patent

active

057740151

ABSTRACT:
In a semiconductor integrated circuit for use in a signal processing, each of semiconductor elements contained in a region 101 is composed of a MOS transistor having a short channel length while each of semiconductor elements contained in a region 102 is composed of a MOS transistor having a long channel length. Although the semiconductor elements contained in the region 101 are rapidly operable with a short rising time and a short trailing time, those contained in the region 102 are operable comparatively slow with a long rising time and a long trailing time. Accordingly, it is possible to reduce electromagnetic emissions produced in the region 102.

REFERENCES:
patent: 4599522 (1986-07-01), Matsuo et al.
patent: 4988902 (1991-01-01), Dingwall
patent: 5294826 (1994-03-01), Marcantonio et al.
patent: 5317207 (1994-05-01), Mortensen
"Radiation From Packaged Integrated Circuits", Koga, Ryuji, pp. 581-584.
"Prediction of Near-Field Electromagnetic Emission from a Digital Circuit Board Based on Resonance Characteristics," Wada, Osami, et al., pp. 304-307.

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