Stacked multi-poly spacers with double cell plate capacitor

Details Stacked multi-poly spacers with double cell plate capacitor Stacked multi-poly spacers with double cell plate capacitor

1991-02-08

1992-06-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

051262800

ABSTRACT:
A multi-poly spacer, double-plate, stacked capacitor or MDSC using a modified stacked capacitor storage cell fabrication process. The MDSC is made up of a rectangular boxed-shaped polysilicon storage node structure, having multiple poly post residing in a buried contact used to connect the MDSC to an active area. The polysilicon storage node structure is overlaid by polysilicon with a dielectric sandwiched in between to form a completed MDSC. Developing the MDSC from a planarized surface allows the capacitor to be fabricated with only 2 photomask steps. With the 3-dimensional shape and a texturized surface of a polysilicon storage node plate, substantial capacitor plate surface area of 100% or more is gained at the storage node.

REFERENCES:
patent: 5053351 (1991-11-01), Fazan et al.
patent: 5061650 (1991-11-01), Dennison et al.
"A Novel Stacked Capacitor Cell With Dual Cell Plate for 64Mb DRAMs", by H. Arima et al. pp. 651-654, 1990 IEEE.

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