Article comprising a relatively temperature-insensitive Ta-oxide

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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361305, 361322, H01G 406, H01G 4008, H01G 410

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active

057543925

ABSTRACT:
Dielectric material of nominal composition (Al.sub.2 O.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x, with 0.03<x<0.15, unexpectedly can exhibit a relatively small temperature variation of the dielectric constant (e.g., <50 ppm/.degree.C. at 1 MHz and 20.degree. C.) and a relatively large value of the dielectric constant. The dielectric according to the invention advantageously is used in capacitive elements, e.g., in MOS capacitors in integrated circuits for personal communication devices.

REFERENCES:
patent: 4054531 (1977-10-01), Takahashi et al.
patent: 4219866 (1980-08-01), Maher
patent: 4223369 (1980-09-01), Burn
patent: 4812426 (1989-03-01), Takagi et al.
"Electrical Properties of Al.sub.2 O.sub.3 -Ta.sub.2 O.sub.5 Composite Dielectric Thin Films Prepared by RF Reactive Sputtering", by K. Nomura, Journal of the Electrochemical Society, Solid-State Science And Technolgy, vol. 134, No. 4, Apr. 1987, pp. 922-925.
"Some Properties of RF Sputtered Al.sub.2 O.sub.3 -Ta.sub.2 O.sub.5 Composite Thin Films", by K. Nomura, J. Electrochem. Soc., vol. 138, No. 12, Dec. 1991, pp. 3701-3705.

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