1989-02-02
1989-11-14
James, Andrew J.
357 238, 357 43, 357 38, 357 86, 357 44, 357 46, H01L 2706
Patent
active
048811190
ABSTRACT:
A semiconductor device includes a bipolar transistor having an emitter region of one conductivity type formed in a base region of the opposite conductivity type, the base region being provided in a collector region of the one conductivity type. A first insulated gate field effect transistor provides a gateable connection to the emitter region of the bipolar transistor while a second insulated gate field effect transistor provides a charge extraction path from the base region when the bipolar transistor is turned off. The first insulated gate field effect transistor includes a further region of the other conductivity type provided in the emitter region, and a source region of the one conductivity type formed in the further region and an insulated gate overlying a channel area comprising at least part of the further region to provide a gateable connection between the emitter region and the source region of the first insulated gate field effect transistor. The second insulated gate field effect transistor having an insulated gate overlying a channel area comprising at least part of the emitter region adjacent the base region to provide a gateable connection between the base region and a source of the second insulated gate field effect transistor.
REFERENCES:
patent: 4441117 (1984-04-01), Zommer
patent: 4618872 (1986-10-01), Baliga
patent: 4623910 (1986-11-01), Risberg
patent: 4639761 (1987-01-01), Singer et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
Coe David J.
Paxman David H.
Slatter John A. G.
Biren Steven R.
James Andrew J.
Soltz David
U.S. Philips Corp.
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