Semiconductor device with improved adhesion between titanium-bas

Details Semiconductor device with improved adhesion between titanium-bas Semiconductor device with improved adhesion between titanium-bas

1995-08-28

1998-05-19

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257758, 257760, 257763, 257764, 257915, H01L 23522, H01L 23532

Patent

active

057539758

ABSTRACT:
A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1.times.10.sup.20 atoms/cm.sup.3.

REFERENCES:
patent: 5334552 (1994-08-01), Homma
European Patent Office Search Report for EP 95113762.9 Nov. 20, 1996.
International Conference on Solid State Devices and Materials. Aug. 21, 1996, pp. 608-610.
Electrochemical Society, Inc., Journal of the Electrochemical Society, vol. 140. No. 3, Mar. 1993, pp. 687-692.
Institute of Electrical and Electronics Engineers Electron Devices Society, 1994 Symposium on VLSI Technology Digest of Technical Papers, Honolulu,, Jun. 7-9, 1994, pp. 59/60.

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