Method for making shallow trench isolation structure having roun

Details Method for making shallow trench isolation structure having roun Method for making shallow trench isolation structure having roun

1996-09-30

1998-05-19

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438701, 438740, H01L 2176

Patent

active

057535612

ABSTRACT:
Disclosed is a method for making a shallow trench structure in a semiconductor substrate. The method includes: (a) forming a mask over a semiconductor substrate, the mask being provided with an aperture extending therethrough which exposes a region of the semiconductor substrate, the aperture having substantially vertical sidewalls; (b) depositing a blanket of silicon over the mask and within the aperture; (c) anisotropically etching the deposited silicon to form temporary spacers having curved profiles at the sidewalls of the aperture, the temporary spacers transferring the curved profiles to a mouth of a shallow trench being etched at the region of the semiconductor substrate as the temporary spacers are etched away; (d) whereby a shallow trench structure is formed where the mouth has a curved profile.

REFERENCES:
patent: 3977925 (1976-08-01), Schwabe
patent: 5023197 (1991-06-01), Haond et al.
patent: 5403770 (1995-04-01), Jang
patent: 5458734 (1995-10-01), Tsukamoto
patent: 5567270 (1996-10-01), Liu
Andres Bryant, W. Haensch, S. Geissler, Jack Mandelman, D. Poindexter, and M. Steger, "The Current-Carrying Corner Inherent to Trench Isolation,"IBM Technology, Vermont and New York, IEEE Log #9211204, May 16, 1993.
Adler, DeBrosse, Geissler, Holmes, Jaffe, Johnson, Koburger, Lasky, Lloyd, Miles Nakos, Noble, Jr., Voldman, Armacost, and Ferguson, "The Evolution of IBM CMOS DRAM Technology,"vol. 39, No. 1/2, Journal of Research and Development, Oct. 14, 1994.

Affiliated with

Also associated with

Rating

Method for making shallow trench isolation structure having roun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making shallow trench isolation structure having roun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making shallow trench isolation structure having roun will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1852702