Resonant microbeam temperature sensor

Thermal measuring and testing – Temperature measurement – By a vibratory effect

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Other Related Categories

G01K 1126

Type

Patent

Status

active

Patent number

057723222

Description

ABSTRACT:
A temperature sensing device employs a resonant polysilicon beam, in combination with electrical circuitry for oscillating the beam at its natural resonant frequency, to sense changes in temperature. The resonant beam is formed as part of a silicon layer, and the silicon layer is in direct contact with a dissimilar material. In one version of the device, the silicon layer is deposited onto a sapphire substrate by low pressure chemical vapor deposition. In another version, the beam is part of a polysilicon layer deposited onto a silicon wafer substrate. The silicon substrate is thinned, then thermoelectrically bonded to a borosilicate glass substrate. In still another version, the silicon substrate is selectively thinned and has deposited thereon a TCE mismatched material. In all versions, temperature is sensed based on a thermal mismatch of the two dissimilar materials. The respective layers expand (and contract) at different rates in response to temperature changes, altering the level of induced axial strain in the resonant beam. The change in induced strain alters the frequency at which the beam oscillates, thereby providing a direct indication of temperature.

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patent: 5141331 (1992-08-01), Oehler et al.
patent: 5275055 (1994-01-01), Zook et al.
patent: 5417115 (1995-05-01), Burns
patent: 5458000 (1995-10-01), Burns et al.
patent: 5511427 (1996-04-01), Burns

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