Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1990-11-30
1993-11-23
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257412, 257764, 257768, 359 87, H01L 2348
Patent
active
052647285
ABSTRACT:
The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; a second metal layer (upper layer) formed integrally with the first metal layer and made of at least an alloy selected from the group consisting of Ta, a Ta-Mo alloy, a Ta-Nb alloy, a Ta-W alloy, a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; and/or a pin hole-free oxide film. The line material of the laminated structure is to be applied to the formation of signal lines and electrodes of, e.g., a liquid crystal display. The line material has a low resistance and the insulating film formed by anodization and the like exhibits excellent insulation and thermal stability. Therefore, when the line material is applied to signal lines of various devices, it exhibits excellent characteristics.
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Ikeda Mitsushi
Murooka Michio
Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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