Polycrystalline silicon carbide ceramic wafer and substrate

Details Polycrystalline silicon carbide ceramic wafer and substrate Polycrystalline silicon carbide ceramic wafer and substrate

Filed on

1998-04-21

Date issued

2000-06-20

Examiner

Turner, Archene

Patent Class

Stock material or miscellaneous articles

SubClass

Composite

SubSubClass

Of inorganic material

Other Related Categories

428141, 428156, 428457, 428469, 428472, 428697, 428699, 428692, 428693, 428701, 428702, G11B 582

Type

Patent

Status

active

Patent number

060776196

Description

ABSTRACT:
A substrate made of polycrystalline .beta.SiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a chip wafer to receive different thin film coatings as part of manufacturing electrical devices and integrated circuits. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystallographic planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than about 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.

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