Method of making a hetero-junction bipolar transistor

Details Method of making a hetero-junction bipolar transistor Method of making a hetero-junction bipolar transistor

1993-02-22

1993-11-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437184, 437234, 148DIG64, 148DIG72, 148DIG11, H01L 21265

Patent

active

052643794

ABSTRACT:
A method of manufacturing a heterojunction bipolar transistor is disclosed. On a base layer of a first semiconductor which contains at least one of gallium and arsenic as a constituent element, an emitter layer of a second semiconductor is formed which contains as a constituent element at least one of gallium and arsenic and which has a band gap larger that of the first semiconductor. Predetermined regions of the emitter layer and an upper portion of the base layer are removed to form a mesa structure. Then, a surface of a junction region of the base layer and the emitter layer of the formed mesa structure is treated using a phosphate etchant and a sulfur or sulfide passivating agent. After the surface treatment, the surface of the junction is covered with an insulating film.

REFERENCES:
patent: 4162203 (1979-07-01), Eden et al.
patent: 4467521 (1984-08-01), Spooner et al.
patent: 4499656 (1985-02-01), Fabian et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4751201 (1988-06-01), Nottenburg et al.
patent: 4772489 (1988-09-01), Shikata
patent: 4835117 (1989-05-01), Ohba et al.
patent: 4920078 (1990-04-01), Bagley et al.
patent: 4962065 (1990-10-01), Brown et al.
patent: 4977100 (1990-12-01), Shimura
H. Oigawa et al., Studies on an (NH4) 2SX-Treated GAAS Surface Using Aes, Leels and Rheed, Japanese Journal of Applied Physics vol. 28, No. 3, Mar. 1989, Tokyo, Japan pp. L430-L342, XP205861.

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