Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-09-21
1995-06-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257757, 257763, 257764, 257915, H01L 2940, H01L 23532
Patent
active
054263301
ABSTRACT:
A device includes a substrate, at least one dielectric layer positioned on said substrate, and metalization positioned in an opening in the at least one dielectric layer and extending a predetermined distance towards the substrate from a surface which is substantially coplanar with a surface of the at least one dielectric layer. The metalization includes a low resistivity metal or alloy encapsulated by a refractory metal or alloy having a resistivity greater than that of the low resistivity metal or alloy and having a columnar structure. The metalization has a plurality of sides in cross-section, at least three sides of the plurality of sides being substantially formed of a refractory metal or alloy having a common composition, at least two sides of the plurality of sides extending substantially the predetermined distance, and all of the plurality of sides being formed within the opening in the at least one dielectric layer.
REFERENCES:
patent: 4339305 (1982-07-01), Jones
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4720908 (1988-01-01), Wills
patent: 4789648 (1988-12-01), Chow et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4824802 (1989-04-01), Brown et al.
patent: 4873565 (1989-10-01), Roane
patent: 4924295 (1990-05-01), Kuecher
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 4992135 (1991-02-01), Doan
patent: 5055906 (1991-10-01), Mase et al.
patent: 5148259 (1992-09-01), Kato et al.
patent: 5169685 (1992-12-01), Woodruff et al.
patent: 5187119 (1993-02-01), Cech et al.
patent: 5243222 (1993-09-01), Harper et al.
patent: 5300813 (1994-04-01), Joshi et al.
IBM TDB, Encasing Aluminum Lines in Tungsten To Prevent Al Migration in Al-W Interconnect Metallurgies, vol. 30, No. 5, Oct. 1987, p. 1087.
IBM TDB, Enhanced Copper Metallurgy For Biol Application vol. 30, No. 5, Oct. 1990, pp. 217-218.
Dalton, Enhanced Selective Tungsten Encapsulation of Tiw Capped Aluminum Interconnect, Jun. 12-13, 1990 IEEE VMIC Conference, pp. 289-293.
Translation of Takeuchi et al., Japan KOKAI Pub. #60-173857; 8 pages.
Cuomo Jerome J.
Dalal Hormazdyar M.
Hsu Louis L.
Joshi Rajiv V.
Brown Peter Toby
Hille Rolf
International Business Machines - Corporation
Walter Howard J.
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