Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1980-09-26

1982-06-01

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148187, 357 24, H01L 2128

Patent

active

043320783

ABSTRACT:
In manufacturing a semiconductor device, a semiconductor body (2) is first provided with a first insulating layer (3,4) having a homogeneous dielectric thickness. A first conductor pattern (5) of polycrystalline silicon is then provided on the first insulating layer. A second insulating layer (6) is formed by oxidation of the first conductor pattern in such manner that the dielectric thickness of the first insulating layer remains approximately constant. Insulating paths (8) are then formed in spaces below edges (9) of the second insulating layer by successive deposition and etching steps. During the deposition step, a temporary layer is deposited to a thickness exceeding half the height of the spaces. During the etching step, the temporary layer is removed from the second insulating layer. Finally, a second conductor pattern (7) is provided on and beside the second insulating layer.

REFERENCES:
patent: 3909925 (1975-10-01), Forbes
patent: 4027382 (1977-06-01), Tasch et al.
patent: 4077112 (1978-03-01), Theunissen et al.
patent: 4178396 (1979-12-01), Okano et al.
patent: 4288256 (1981-09-01), Ning et al.

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