Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

1997-04-01

2000-06-20

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

156345, 438729, 216 67, 216 71, 427569, C23C 1600, H01L 2100

Patent

active

060764813

ABSTRACT:
One or more mismatching portions in which a characteristic impedance of a high frequency transmission cable of a cathode electrode is changed in a traveling direction of an incident wave of the high frequency are provided on the cathode electrode for use in plasma processing, whereby the plasma processing can form a high-quality deposited film having an extremely uniform film thickness and a homogeneous film quality on a substrate at high speed, can effectively form a semiconductor device, can also form the high-quality deposited film having the extremely uniform film thickness and the homogeneous film quality in the axial direction and the circumferential direction of the cylindrical substrate on the surfaces of a plurality of cylindrical substrates at high speed, and can effectively form the semiconductor device.

REFERENCES:
patent: 4633811 (1987-01-01), Maniyama
patent: 5069928 (1991-12-01), Echizen et al.
patent: 5292396 (1994-03-01), Takashima et al.
patent: 5512510 (1996-04-01), Maruyama et al.
patent: 5534070 (1996-07-01), Okamura et al.
Curtins et al., "Influence of Plasma Excitation Frequency for .alpha.-Si:H Thin Film Deposition", Plasma Chemistry and Plasma Processing, vol. 7, No. 3, 1987, pp. 267-273.

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