Field effect semiconductor device having a protective diode

Details Field effect semiconductor device having a protective diode Field effect semiconductor device having a protective diode

1970-06-26

1976-12-21

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 357 13, 357 23, 357 52, H01L 2704, H01L 2978, H01L 2990

Patent

active

039992128

ABSTRACT:
A semiconductor device comprising a semiconductor element having an insulated gate electrode and a protective diode region provided in the neighborhood of the semiconductor element to protect the gate electrode from a dielectric breakdown; the diode is formed by a low resistivity semiconductor material to reduce its internal resistance, thereby accelerating the action of the protective diode so that the clamp action of the diode occurs earlier than the dielectric breakdown of the gate electrode.

REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3244949 (1966-04-01), Hilbiber
patent: 3555374 (1971-01-01), Usuda

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