Charge transfer semiconductor device

Details Charge transfer semiconductor device Charge transfer semiconductor device

1975-07-14

1976-12-21

Lynch, Michael J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221C, 307304, H01L 2978

Patent

active

039992080

ABSTRACT:
A charge transfer semiconductor device includes charge transfer passages which are formed in the interior of a semiconductor substrate and between adjacent gate electrodes, so that when a control voltage is applied to the gate electrode, charges to be transferred are moved principally through the charge transfer passage, whereby the charges are prevented from being trapped between the gate electrodes.

REFERENCES:
patent: 3676715 (1972-07-01), Brojdo
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3829884 (1974-08-01), Borel et al.
S. Shimizu et al., "Charge-Coupled Device with Buried Channels Under Electrode Gaps", Appl. Phys. Letters, vol. 22, No. 6, Mar. 15, 1973, pp. 286-287.

Affiliated with

Also associated with

Rating

Charge transfer semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge transfer semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1842712