Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1979-09-25

1982-01-05

Weisstuch, Aaron

Metal treatment

Compositions

Heat treating

29571, 29576B, 29584, 427 531, 219121LM, 357 23, 357 59, 357 91, H01L 21268

Patent

active

043092241

ABSTRACT:
A method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electric conductive portion such as an electrode and/or conductor, which includes steps for doping the polycrystalline silicon layer with an impurity, and applying a radiation beam at least to part of the polycrystalline silicon layer after a heating step, thereby reducing the resistance of the polycrystalline silicon layer thereby to improve the operating speed of the device.

REFERENCES:
patent: 3950187 (1976-04-01), Kirkpatrick
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4214918 (1980-07-01), Gat et al.
A. L. Robinson, "Laser Annealing Processing Semiconductors Without a Furnace", Science, vol. 201, pp. 333-335 (1978).

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