1975-03-03
1977-05-17
Wojciechowicz, Edward J.
357 45, 357 88, 357 89, 357 90, H01L 2904, H01L 2710
Patent
active
040245667
ABSTRACT:
When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the crystal. This random walk of the droplet is minimized to enable preservation of the registry of deep diode arrays by maintaining a unidirectional thermal gradient a few degrees off the [100] axis.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Squillaro Jerome C.
Watts Charles T.
Wojciechowicz Edward J.
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